SIMS quantification of Si1-xGex alloys using polyatomic secondary ions

Surface and Interface Analysis

Volumn 32, Issue 1, 2001, Pages 171-174

  Dong, Gui ^a   Liangzhen, Cha ^a   Rong, Liu ^b   Wee, A T S ^b  

^a TSINGHUA UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Germanium; Heterostructures; Matrix effect; Secondary ion mass spectrometry; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; POSITIVE IONS; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

POLYATOMIC SECONDARY IONS;

SILICON ALLOYS;

EID: 0035419058     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1030     Document Type: Article

References (5)