Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si 1-x Ge x alloy layers

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 500-503

  Dowsett, M G ^a   Morris, R ^a   Chou, Pei Fen ^b   Corcoran, S F ^e   Kheyrandish, H ^c   Cooke, G A ^c   Maul, J L ^d   Patel, S B ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c MATS UK   (United Kingdom)

^d Division of Cardiac Surgery and Cardiology Munich Bogenhausen   (Germany)

^e NONE

Author keywords

Charge compensation; SiGe; Ultra shallow SIMS profiling

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS;

CHARGE COMPENSATION;

SILICON ALLOYS;

EID: 3543071532     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00765-1     Document Type: Conference Paper

References (4)

1. M.G. Dowsett, S.B. Patel, S.F. Corcoran, P.-F. Chou, unpublished.
2. McPhail D.S., Dowsett M.G., Parker E.H.C. J. Appl. Phys. 60:1986;2573.
3. Dowsett M.G., Collins R. Phil. Trans. Roy. Soc. Lond. A. 354:1996;2713.
4. M.G. Dowsett, these proceedings.