Current topics of silicon germanium devices

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6158-6161

  Kasper, Erich ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Lattice mismatch; Microelectronics; Optoelectronics; Strained layer

Indexed keywords

GERMANIUM; LATTICE MISMATCH; MICROELECTRONICS; OPTOELECTRONIC DEVICES; SILICON;

IN CONTEXTS; INTERFACE PROBLEMS; INTERFACE PROPERTY; LATTICE-MISMATCHED; SIGE/SI HETEROSTRUCTURES; SILICON GERMANIUM; STRAINED LAYERS; STRAINED-LAYER GROWTH;

SI-GE ALLOYS;

EID: 45049084708     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.149     Document Type: Article

References (29)

1. H. Grimmeiss, Pers. Comm.
2. Bohr M.T., Chau R.S., Ghani T., and Mistry K. The high-k solution. IEEE Spectrum October (2007) 23 (INT)
3. Eberhardt J., and Kasper E. Solid-State Electron. 45 (2001) 2097
4. Cressler J.D. Silicon Heterostructure Handbook (2006), CRC press, New York
5. Kasper E., Schuh A., Bauer G., Holländer B., and Kibbel H. J. Cryst. Growth 157 (1995) 68
6. Yeo Y.C. Semicond. Sci. Technol. 22 (2007) 5177
7. Ohta H. TEDM Tech. Dig. (2005) 247
8. Liu Y. Proc. Symp. VLSI Tech. (2007) 247
9. Kasper E., and Paul D.J. Silicon Quantum Integrated Circuits, Silicon-Germanium Heterostructure; Devices: Basics and Realisations (2005), Springer-Verlag, Heidelberg
10. Olsen S. IEEE Trans.-ED 53 (2006) 2296
11. Hadjisavvas G., Tsetseris L., and Pantelides S.T. IEEE-EDL 28 (2007) 1018
12. Wang J.-S., Chen P.-N., Shih C.-H., Lien C., Su P., Sheu Y.-M., Chao D.Y.-S., and Goto K.-I. IEEE-EDL 28 (2007) 1040
13. Oehme M., Werner J., Kasper E., Jutzi M., and Berroth M. Appl. Phys. Lett. 89 (2006) 071117
14. In: Martienssen W. (Ed). Semiconductor Quantum Structures, Optical Properties, Landolt-Boernstein, New Series, Group III vol. 34 (2007), Springer (Chapter 3)
15. M. Oehme, this volume.
16. Jutzi M., Berroth M., Wohl G., Oehme M., and Kasper E. IEEE Photonic Technol. Lett. 17 (2005) 1510
17. Yu J., Kasper E., and Oehme M. Thin Solid Films 508 (2006) 396
18. E. Kasper, K. Lyutovich, Properties of silicon germanium and SiGe: carbon, EMIS datareviews series 24, INSPEC (IEE), London, 2000.
19. Lyutovich K., Ernst F., Kasper E., Bauer M., and Oehme M. Solid State Phenom. 69/70 (1999) 179
20. Claeys C., and Simoen E. Germanium-based Technologies: from Materials to Devices (2007), Elsevier, Amsterdam
21. Kasper E., Eberhardt J., Jorke H., Luy J.-F., Kibbel H., Dashiell D.W., Schmidt O.G., and Stoffel M. Solid-State Electron. 48 (2004) 837
22. Grinberg A.A., and Luryi S. IEEE Trans. ED-40 1537 (2003)
23. Mastrapasqua M., King C.A., Smith P.R., and Pinto M.R. IEEE Trans. ED-43 1671 (1996)
24. E. Kasper, German Patent, 198 607 01 (1998).
25. Kasper E., Herzog H.J., and Kibbel H. Appl. Phys. 8 (1975) 199
26. Kasper E., and Herzog H.J. Wiss. Berichte AFG - Telefunken 49 (1976) 213
27. Kasper E., and Pabst W. Thin Solid Films 37 (1976) L5
28. Kasper E., and Herzog H.J. Thin Solid Films 38 (1977) 357
29. People Q., and Bean J.C. Appl. Phys. Lett. 49 (1986) 229