Residual stress behavior of thin plasma-enhanced chemical vapor deposited silicon dioxide films as a function of storage time

Journal of Applied Physics

Volumn 81, Issue 7, 1997, Pages 3129-3133

  Haque, M S ^a   Naseem, H A ^a   Brown, W D ^a  

^a 3202 Bell Engineering Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IMPURITIES; MATHEMATICAL MODELS; MICROSTRUCTURE; PLASMA APPLICATIONS; POROSITY; RESIDUAL STRESSES; SILICA; STRESS ANALYSIS;

COMPRESSIVE STRESS; FILM THICKNESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANOL BUILDUP; STORAGE TIME; SURFACE REACTIVITY; WATER DIPOLE INTERACTION;

THIN FILMS;

EID: 0031124298     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364347     Document Type: Article

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