Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films

Journal of the Ceramic Society of Japan

Volumn 117, Issue 1365, 2009, Pages 566-569

  Hong, Chanseok ^a   Kim, Hohyeong ^a   Kim, Hyoun Woo ^a   Cho, Namhee ^a   Lee, Ilhang ^a   Lee, Ikmo ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

Cosputtering; InAlZnO; Resistivity; Transmittance; Transparent conducting oxide (TCO)

Indexed keywords

ELECTRIC CONDUCTIVITY; MAGNETRONS; SEMICONDUCTOR DOPING; SPUTTERING; SUBSTRATES; THIN FILMS; ZINC OXIDE;

COSPUTTERING; GLASS SUBSTRATES; INALZNO; INDIUM CONCENTRATION; MAGNETRON CO-SPUTTERING; TRANSMITTANCE; TRANSPARENT CONDUCTING OXIDE; WAVELENGTH RANGES;

ALUMINUM;

EID: 67649365854     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.117.566     Document Type: Article

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