Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous si/polycrystalline al bilayers

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 6, 2009, Pages 3364-3371

  Wang, J Y ^a   Wang, Z M ^a   Jeurgens, L P H ^a   Mittemeijer, E J ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Aluminium induced crystallization; Aluminium induced layer exchange; Low temperature annealing; Thermodynamics

Indexed keywords

A-SI LAYERS; ALUMINIUM-INDUCED CRYSTALLIZATION; ALUMINIUM-INDUCED LAYER EXCHANGE; AMORPHOUS SI; AMORPHOUS STATE; AUGER ELECTRON; BI-LAYER; CRITICAL THICKNESS; DRIVING FORCE CONTROL; GRAIN SIZE; GRAIN-BOUNDARY ENERGY; INTERFACE ENERGY; LAYER EXCHANGE; LOW-TEMPERATURE ANNEALING; SI LAYER; THERMODYNAMIC MODEL;

ALUMINUM; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTALLIZATION; DEPTH PROFILING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NUCLEATION; SILICON; SILICON SOLAR CELLS; TEMPERATURE; THERMODYNAMICS;

AMORPHOUS SILICON;

EID: 67649227853     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.NS03     Document Type: Conference Paper

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