Thermal annealing of the epitaxial Al/Si(111)7x7 interface: Al clustering, interfacial reaction, and Al-induced p+doping

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 5, 1995, Pages 2399-2406

  Wen, H J ^a   Dahne Prietsch M ^a   Bauer, A ^a   Cuberes, M T ^a   Manke, I ^a   Kaindl, G ^a  

^a FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21844517100     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579480     Document Type: Article

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