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Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 171-179

Depth dependences of the ion bombardment induced roughness and of the interdiffusion coefficient for Si/Al multilayers

(3) Wang, J Y a Zalar, A b Mittemeijer, E J a

a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

b JO EF STEFAN INSTITUTE (Slovenia)

Author keywords

AES depth profiling; Interdiffusion coefficient; Si Al multilayer; Sputter induced roughness

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DIFFUSION; INTERDIFFUSION (SOLIDS); ION BOMBARDMENT; ISOTHERMS; MICROSTRUCTURE; MOLECULAR ORIENTATION; MULTILAYERS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC MIXING; DEPTH PROFILING;

SURFACE ROUGHNESS;

EID: 0346122811 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2003.08.007 Document Type: Article

Times cited : (21)

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