Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1-xGex/Si triple barrier diodes

Applied Physics Letters

Volumn 79, Issue 14, 2001, Pages 2273-2275

  Suda, Yoshiyuki ^a   Koyama, Hajime ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035473584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1408598     Document Type: Article

References (10)

1. D. J. Paul, Thin Solid Films 321, 172 (1998).
2. M. J. Kelly, Low-Dimensional Semiconductors (Oxford University Press, New York, 1995) p. 191.
3. H. C. Liu, D. Landheer, N. Buchanan, and D. C. Houghton, Appl. Phys. Lett. 52, 1809 (1988).
4. D. X. Xu, G. D. Shen, M. Willander, J. F. Luy, and F. Schäffler, Solid-State Electron. 35, 611 (1992).
5. S. S. Rhee, J. S. Park, R. P. G. Karunasiri, A. Ye, and K. L. Wang, Appl. Phys. Lett. 53, 204 (1988).
6. U. Gennser, V. P. Kesan, S. S. Iyer, T. J. Bucelot, and E. S. Yang, J. Vac. Sci. Technol. B 9, 2059 (1991).
7. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).
8. K. Ismail, B. S. Meyerson, and P. J. Wang, Appl. Phys. Lett. 59, 973 (1991).
9. Z. Matutinović-Krstelj, C. W. Liu, X. Xiao, and J. C. Sturm, Appl. Phys. Lett. 62, 603 (1993).
10. Z. Matutinoviac-Krstelj, C. W. Liu, X. Xiao, and J. C. Sturm, J. Vac. Sci. Technol. B 11, 1145 (1993).