Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si 1-x Ge x /Si(1 0 0) heterostructure

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6265-6267

  Seo, Takahiro ^a   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Heterostructure; Negative differential conductance (NDC); Quantum well; Resonant tunneling diode (RTD); Si; SiGe; Strain

Indexed keywords

DIODES; GERMANIUM; HETEROJUNCTIONS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; SI-GE ALLOYS; SILICON; SILICON WAFERS; STRAIN; TEMPERATURE MEASURING INSTRUMENTS;

ELECTRICAL CHARACTERISTIC; EPITAXIALLY GROWN; GE FRACTION; NEGATIVE DIFFERENTIAL CONDUCTANCE; PEAK CURRENTS; RESONANT PEAKS; SIGE; SINGLE WAFER;

RESONANT TUNNELING DIODES;

EID: 45049084274     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.153     Document Type: Article

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