The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination

Nanotechnology

Volumn 20, Issue 22, 2009, Pages

  Ko, Kwang Man ^a   Seo, Jung Han ^a   Kim, Dong Eun ^a   Lee, Sang Tae ^b   Noh, Young Kyun ^b   Kim, Moon Deock ^b   Oh, Jae Eung ^a  

^a Hanyang University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CRYSTAL QUALITIES; DEFECT SITES; HIGH TEMPERATURE; INAS; INAS/ALGASB; INSB QUANTUM DOT; LOW DEFECT DENSITIES; MEAN ROUGHNESS; MISMATCHED SUBSTRATES; NUCLEATION BEHAVIOR; QUANTUM DOT; ROOM TEMPERATURE; SI SUBSTRATES; SILICON SUBSTRATES; STRANSKI-KRASTANOV GROWTH MODE; STRUCTURAL DEFECT; SUBSTRATE TEMPERATURE; SURFACE MIGRATION; SURFACE STEPS; X RAY ROCKING CURVE;

BUFFER LAYERS; CRYSTAL GROWTH; DEFECT DENSITY; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SURFACE DEFECTS; SURFACES;

SUBSTRATES;

ALUMINUM; ANTIMONY; GALLIUM; INDIUM; QUANTUM DOT; SILICON;

ARTICLE; CONTROLLED STUDY; ELECTRON; HIGH TEMPERATURE; PRIORITY JOURNAL; ROOM TEMPERATURE;

EID: 67649147966     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/22/225201     Document Type: Article

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