Effect of micro-twin defects on InSb quantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1171-1173

  Mishima, T D ^a   Keay, J C ^a   Goel, N ^a   Ball, M A ^a   Chung, S J ^a   Johnson, M B ^a   Santos, M B ^a  

^a UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INSB QUANTUM WELLS; MICRO-TWIN DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31144475880     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1914822     Document Type: Conference Paper

References (10)

1. A. Oral, M. Kaval, M. Dede, H. Masuda, A. Okamoto, I. Shibasaki, and A. Sandhu, IEEE Trans. Magn. 38, 2438 (2002).
2. T. Ashley, A. B. Dean, C. T. Elliot, G. J. Pryce, A. D. Johnson, and H. Willis, Appl. Phys. Lett. 66, 481 (1995).
3. J. Heremans, D. L. Partin, C. M. Thrush, and L. Green, Semicond. Sci. Technol. 8, S424 (1993).
4. X. Weng, N. G. Rudawski, P. T. Wang, R. S. Goldman, D. L. Partin, and J. Heremans, J. Appl. Phys. 97, 043713 (2005).
5. S. A. Solin, D. R. Hines, A. C. H. Rowe, J. S. Tsai, Yu. A. Pashkin, S. J. Chung, N. Goel, and M. B. Santos, Appl. Phys. Lett. 80, 4012 (2002).
6. G. A. Khodaparast, R. E. Doezema, S. J. Chung, K. J. Goldammer, and M. B. Santos, Phys. Rev. B 70, 155322 (2004).
7. N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, and Y. Hirayama, Physica E (Amsterdam) 21, 761 (2004).
8. T. D. Mishima, J. C. Keay, N. Goel, M. A. Ball, S. J. Chung, M. B. Johnson, and M. B. Santos, J. Cryst. Growth 251, 551 (2003).
9. T. D. Mishima, J. C. Keay, N. Goel, M. A. Ball, S. J. Chung, M. B. Johnson, and M. B. Santos, Physica E (Amsterdam) 20, 260 (2004).
10. T. D. Mishima and M. B. Santos, J. Vac. Sci. Technol. B 22, 1472 (2004).