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Volumn 82, Issue 12, 1997, Pages 6008-6011

Microstructural study of Mg-doped p-type GaN: Correlation between high-resolution electron microscopy and Raman spectroscopy

(5) Tsen, S C Y a Smith, David J a Tsen, K T a Kim, W b Morkoc H b

a ARIZONA STATE UNIVERSITY (United States)

b University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON MICROSCOPY; MAGNESIUM; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; STACKING FAULTS;

DEFECTIVE WURTZITE; LATTICE DISTORTION; X RAY MEASUREMENTS; ZINC BLENDE PHASES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031354444 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366466 Document Type: Article

Times cited : (15)

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