Immersion lithography ready for 45 nm manufacturing and beyond

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn , Issue , 2007, Pages 238-244

  Owa, Soichi ^a   Nakano, Katsushi ^a   Nagasaka, Hiroyuki ^a   Fujiwara, Tomoharu ^a   Matsuyama, Tomoyuki ^a   Ohmura, Yasuhiro ^a   Magoon, Holly ^b  

^a NIKON CORPORATION   (Japan)

^b NIKON PRECISION INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH MEMORY; NAND CIRCUITS; OPTICAL RESOLVING POWER; SEMICONDUCTOR DEVICE MANUFACTURE; WAVELENGTH;

IMMERSION FLUIDS; IMMERSION LITHOGRAPHY; PROCESS DEVELOPMENT; VOLUME MANUFACTURING;

LITHOGRAPHY;

EID: 34748837181     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2007.375108     Document Type: Conference Paper

References (8)

1. S. Owa et al.,"Immersion Lithography for 45 nm Manufacturing", Microlithography World, February, 2007.
2. rd International Symposium on Immersion Lithography, Kyoto, Japan October 2006.
3. K. Nakano et al., "Immersion defectivity study with volume production immersion lithography tool", 6520-42 SPIE Microlithography 2007.
4. J. Ishikawa et al., "Latest results from the hyper-NA immersion scanners S609B and S610C", 6520-76 SPIE Microlithography 2007.
5. rd International Symposium on Immersion Lithography, Kyoto, Japan October 2006.
6. H. Magoon et al., "Hyper-NA Lens Challenges", Semiconductor International (online), February 2007.
7. Y. Ohmura et al., "Current Status of High Index Immersion Lithography Development, SPIE Microlithography 2007.
8. rd International Symposium, on. Immersion Lithography, Japan October 2006.