A-plane sapphire: A well-matched substrate for epitaxial growth of indium tin oxide

Thin Solid Films

Volumn 515, Issue 20-21, 2007, Pages 7866-7869

  Chern, M Y ^a   Huang, Y C ^a   Xu, W L ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A plane sapphire; Epitaxy; ITO; Mobility; Pendell sung fringes; Pulsed laser deposition; Resistivity; X ray diffraction

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EPITAXIAL GROWTH; INDIUM COMPOUNDS; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

INDIUM TIN OXIDES; PLANE SAPPHIRE; VAN DER PAUW METHODS;

THIN FILMS;

EID: 34547702428     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.023     Document Type: Article

References (10)

1. Tarsa E.J., English J.H., and Speck J.S. Appl. Phys. Lett. 62 (1993) 2332
2. Ohta H., Kawamura K., Orita M., Hirano M., Sarukura N., and Hosono H. Appl. Phys. Lett. 77 (2000) 475
3. Kamei M., Yagami T., Takaki S., and Shigesato Y. Appl. Phys. Lett. 64 (1994) 2712
4. Kwok H.S., Sun X.W., and Kim D.H. Thin Solid Films 335 (1998) 299
5. Ohta H., Orita M., Hirano M., Tanji H., Kawazoe H., and Hosono H. Appl. Phys. Lett. 76 (2000) 2740
6. Ohta H., Orita M., Hirano M., and Hosono H. J. Appl. Phys. 91 (2002) 3547
7. Ohta H., Kambayashi T., Nomura K., Hirano M., Ishikawa K., Takezoe H., and Hosono H. Adv. Mater. 16 (2004) 312
8. Krishnamoorthy S., Iliadis A.A., Inumpudi A., Choopun S., Vispute R.D., and Venkatesan T. Solid-state Electron. 46 (2002) 1633
9. Lin M.Z., Su C.T., Yan H.C., and Chern M.Y. Jpn. J. Appl. Phys., Part 2, Lett. 44 (2005) L995
10. Yao N., Wang Z.L., and Cowley J.M. Surf. Sci. 208 (1989) 533