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Physical Review B

Volumn 49, Issue 20, 1994, Pages 14352-14366

Motion of electrons in semiconductors under inhomogeneous strain with application to laterally confined quantum wells

(1) Zhang, Yong a

a DARTMOUTH COLLEGE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000438229 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.49.14352 Document Type: Article

Times cited : (59)

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- IS FIG. 1. Strain potentials for the quantum wire structure in Ref. 4 (a) for the conduction band and (b) for the heavy and the light holes. The potential for the light hole is displaced by Δ E =10 meV. Solid line: effective potentials including heavy-hole–light-hole coupling. Dotted line: band-edge modulations including heavy-hole–light-hole coupling by the theory of Ref. 4. Dashed line: potentials given by the diagonal terms. The sign of the energy for the valence band has been inverted from the conduction band.IEIS FIG. 2. Energy levels of the bound states in the quantum wire (a) for the conduction band, and (b) for the heavy and light holes. The energy references are the bottom of the conduction band and the top of the valence band in the quantum well, respectively. Odd n for even-parity envelope functions, even n for odd parity.IE
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