Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers

Surface and Coatings Technology

Volumn 203, Issue 17-18, 2009, Pages 2658-2663

  Tetelbaum, D I ^a,b   Mikhaylov, A N ^a,b   Vasiliev, V K ^a,b   Belov, A I ^b   Kovalev, A I ^a   Wainstein, D L ^a   Mendeleva, Yu A ^b   Finstad, T G ^c   Foss, S ^c   Golan, Y ^d   Osherov, A ^d  

^a CNIICHERMET   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c UNIVERSITY OF OSLO   (Norway)

^d BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Carbon rich clusters; Composition; Ion implantation; Photoluminescence; Silicon dioxide; Silicon nanocrystals

Indexed keywords

AMORPHOUS NANOPARTICLES; ANNEALED LAYERS; ANNEALING TEMPERATURES; BROAD SPECTRAL; CARBON IMPLANTATIONS; CARBON-RICH CLUSTERS; COMPOSITION; CONCENTRATION OF; DIAMOND LIKES; HINDERING EFFECTS; ION IRRADIATIONS; LUMINESCENCE BANDS; MATRIX DEFECTS; MATRIXES; OXYGEN-DEFICIENT DEFECTS; PHASE INCLUSIONS; ROOM TEMPERATURES; SI NANOCRYSTALS; SILICON DIOXIDE; SILICON NANOCRYSTALS; SPECTRAL RANGES; SUB-BANDS; THERMAL TREATMENTS; VISIBLE LUMINESCENCES;

AMORPHOUS FILMS; ANNEALING; CARBON CLUSTERS; CHEMICAL MODIFICATION; EMISSION SPECTROSCOPY; ION BOMBARDMENT; ION IMPLANTATION; LEAKAGE (FLUID); LIGHT EMISSION; NANOCRYSTALS; OPTICAL WAVEGUIDES; OXYGEN; PHOTOLUMINESCENCE; SILICA; SILICON; SILICON CARBIDE; SILICON OXIDES; SYNTHESIS (CHEMICAL);

AMORPHOUS SILICON;

EID: 67349219178     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.02.087     Document Type: Article

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