Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices - The photoluminescence study

Vacuum

Volumn 78, Issue 2-4, 2005, Pages 519-524

  Tetelbaum, D I ^a   Mikhaylov, A N ^a   Gorshkov, O N ^a   Kasatkin, A P ^a   Belov, A I ^a   Gaponova, D M ^b   Morozov, S V ^b  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

Coalescence; Ion implantation; Photoluminescence; Sapphire; Silicon dioxide; Silicon nanocrystals

Indexed keywords

ANNEALING; COALESCENCE; ION BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RADIATION EFFECTS; SAPPHIRE;

ANNEALING TEMPERATURE; GATE DIELECTRICS; RADIATIVE RECOMBINATION; SILICON NANOCRYSTALS;

SILICA;

EID: 18444361826     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.01.078     Document Type: Conference Paper

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