The formation of silicon nanocrystals in SiO"2 layers by the implantation of Si ions with intermediate heat treatments

Semiconductors

Volumn 39, Issue 5, 2005, Pages 552-556

  Kachurin, G A ^a   Volodin, V A ^a   Tetel'baum, D I ^b   Marin, D V ^a   Leier A F ^a   Gutakovskii A K ^a   Cherkov, A G ^a   Mikhailov A N ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18744378645     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1923564     Document Type: Article

References (28)

1. T. Shimizu-Iwaima, K. Fujita, S. Nakao, et al., J. Appl. Phys. 75, 7779 (1994).
2. P. Mutti, G. Ghislotti, S. Bertoni, et al., Appl. Phys. Lett. 66, 851 (1995).
3. E. Wendler, U. Herrmann, W. Wesh, and H. H. Dunken, Nucl. Instrum. Methods Phys. Res. B 116, 332 (1996).
4. G. A. Kachurin, K. S. Zhuravlev, N. A. Pazdnikov, et al., Nucl. Instrum. Methods Phys. Res. B 127-128, 583 (1997).
5. G. A. Kachurin, A. F. Leǐer, K. S. Zhuravlev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1371 (1998)
6. [Semiconductors 32, 1222 (1998)].
7. A. Mimura, M. Fujii, S. Hayashi, et al., Phys. Rev. B 62, 12625 (2000).
8. G. A. Kachurin, S. G. Yanovskaya, D. I. Tetel'baum, and A. N. Mikhaǐlov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 738 (2003)
9. [Semiconductors 37, 713 (2003)].
10. J. Zhao, D. S. Mao, Z. X. Lin, et al., Appl. Phys. Lett. 74, 1403 (1999).
11. G. A. Kachurin, S. G. Yanovskaya, K. S. Zhuravlev, and M.-O. Ruault, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 1235 (2001)
12. [Semiconductors 35, 1182 (2001)].
13. V. G. Kesler, S. G. Yanovskaya, G. A. Kachurin, et al., Surf. Interface Anal. 33, 914 (2002).
14. I. E. Tyschenko, L. Rebohle, R. A. Yankov, et al., J. Lumin. 80, 229 (1999).
15. B. G. Potters and J. H. Simmons, Phys. Rev. B 37, 10838 (1988).
16. Y. Maeda, Phys. Rev. B 51, 1658 (1995).
17. S. P. Withrow, C. W. White, A. Meldrum, et al., J. Appl. Phys. 86, 396 (1999).
18. L. You, C. L. Heng, S. Y. Ma, et al., J. Cryst. Growth 212, 109 (2000).
19. X. Du, M. Takeguchi, M. Tanaka, and K. Furuya, Appl. Phys. Lett. 82, 1108 (2003).
20. A. F. Leǐer, L. N. Safronov, and G. A. Kachurin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 389 (1999)
21. [Semiconductors 33, 380 (1999)].
22. G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 685 (2002)
23. [Semiconductors 36, 647 (2002)].
24. B. Fernandez, M. Lopez, C. Garcia, et al., J. Appl. Phys. 91, 798 (2002).
25. S. Veprek, Z. Iqbal, and F.-A. Sarott, Philos. Mag. B 45, 137 (1982).
26. A. Cheung, G. de M. Azevedo, C. J. Glover, et al., Appl. Phys. Lett. 84, 278 (2004).
27. D. K. Yu, R. Q. Zhang, and S. T. Lee, Phys. Rev. B 65, 245417 (2002).
28. F. Iacona, C. Bongiorno, C. Spinella, et al., J. Appl. Phys. 95, 3723 (2004).