Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiOx films

Journal of Applied Physics

Volumn 83, Issue 4, 1998, Pages 2228-2234

  Inokuma, T ^a   Wakayama, Y ^a,b   Muramoto, T ^a   Aoki, R ^a   Kurata, Y ^a   Hasegawa, S ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH TEMPERATURE PROPERTIES; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OXIDES; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

HIGH TEMPERATURE ANNEALING; SILICON SUBOXIDE;

AMORPHOUS FILMS;

EID: 0031997827     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366961     Document Type: Article

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