Influence of the substrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 8, 2009, Pages 704-708

  Shin, Hyun Ho ^a   Joung, Yang Hee ^b   Kang, Seong Jun ^b  

^a The Research and Development Division   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BURSTEIN-MOSS EFFECTS; C-AXIS ORIENTATIONS; DIFFRACTION PEAKS; ELECTRICAL PROPERTY; GA-DOPED; GA-DOPED ZNO; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL TRANSMITTANCE; OXYGEN PRESSURE; PHOTON ENERGY; SUBSTRATE TEMPERATURE; VARIOUS SUBSTRATES; VISIBLE REGION; XRD PEAKS;

CARRIER CONCENTRATION; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; FABRICATION; GALLIUM; GALLIUM ALLOYS; OXIDE FILMS; OXYGEN; PULSED LASER DEPOSITION; THIN FILM DEVICES; THIN FILMS; ZINC; ZINC OXIDE;

SUBSTRATES;

EID: 67349205020     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9788-9     Document Type: Article

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