Microcrystalline silicon, grain boundaries and role of oxygen

Solar Energy Materials and Solar Cells

Volumn 93, Issue 8, 2009, Pages 1444-1447

  Kocka J ^a   Stuchlikova H ^a   Ledinsky M ^a   Stuchlik J ^a   Mates, T ^a   Fejfar, A ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Electronic transport; Grain boundaries; Hydrogen; Microcrystalline silicon; Oxygen

Indexed keywords

AS DOPING; BAND GAPS; D.C. CONDUCTIVITY; DEFECT PASSIVATION; ELECTRONIC TRANSPORT; HIGH GROWTH-RATE; MODEL OF TRANSPORT; OXYGEN CONTENT; PREFACTOR; SI FILMS;

ACTIVATION ENERGY; ALLOYING; AMORPHOUS FILMS; AMORPHOUS SILICON; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGEN; OXYGEN; PASSIVATION;

MICROCRYSTALLINE SILICON;

EID: 67349168117     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.01.013     Document Type: Article

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