Compact channel noise models for deep-submicron MOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1300-1308

  Li, Zhiyuan ^a   Ma, Jianguo ^b   Ye, Yizheng ^a   Yu, Mingyan ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

All regions; Channel noise model; Flicker noise; MOSFET; Physics based; Thermal noise

Indexed keywords

ALL REGIONS; CHANNEL NOISE MODEL; FLICKER NOISE; MOSFET; PHYSICS-BASED;

ELECTRIC FIELDS; MOSFET DEVICES; THERMAL NOISE;

CARRIER MOBILITY;

EID: 67349168067     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2018160     Document Type: Article

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