Surface passivation of GaInAsSb photodiodes with thioacetamide

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 4, 2007, Pages 1508-1512

  Salesse, A ^a   Joullie A ^a   Calas, P ^b   Nieto, J ^c   Chevrier, F ^a   Cuminal, Y ^a   Ferblantier, G ^a   Christol, P ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITÉ DE MONTPELLIER   (France)

^c INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOUND SEMICONDUCTOR; CUT-OFF WAVELENGTHS; EXPERT EVALUATION; GAINASSB; HETERO JUNCTION; SURFACE PASSIVATION; THIOACETAMIDE;

ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; PASSIVATION; PHOTODIODES; TECHNOLOGY;

SEMICONDUCTOR MATERIALS;

EID: 42149192286     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674138     Document Type: Conference Paper

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