Surface recombination velocity reduction in type-II InAsGaSb superlattice photodiodes due to ammonium sulfide passivation

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Li, Jian V ^a,d   Chuang, Shun Lien ^a   Aifer, Edward ^b   Jackson, Eric M ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c SFA INC   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM SULFIDE; SURFACE RECOMBINATION VELOCITY (SRV);

AMMONIUM COMPOUNDS; ELECTRON BEAMS; ELECTRONS; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

PHOTODIODES;

EID: 34249878713     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743905     Document Type: Article

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