Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(0 0 1) surfaces

Surface Science

Volumn 523, Issue 1-2, 2003, Pages 179-188

  Lowe, M J ^a   Veal, T D ^a   McConville, C F ^a   Bell, Gavin R ^a,b   Tsukamoto, S ^b   Koguchi, N ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Electrical transport (conductivity, resistivity, mobility, etc.); Electron energy loss spectroscopy (EELS); Indium arsenide; Plasmons; Semiconducting surfaces

Indexed keywords

ANNEALING; ELECTRON ENERGY LOSS SPECTROSCOPY; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SULFUR; VACUUM;

SEMICONDUCTING SURFACES;

SURFACE PHENOMENA;

EID: 0037427884     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02416-0     Document Type: Article

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