Ellipsometric investigations of (1 0 0) GaSb surface under chemical etching and sulfide treatment

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 293-295

  Papis, E ^a   Kudla, A ^a   Piotrowski, T T ^a   Golaszewska, K ^a   Kaminska E ^a   Piotrowska, A ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DIELECTRIC PROPERTIES; ELECTROCHEMISTRY; ELLIPSOMETRY; ETCHING; PASSIVATION; REFRACTIVE INDEX; SPECTROSCOPIC ANALYSIS;

DIELECTRIC FUNCTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035247258     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00116-5     Document Type: Article

References (4)

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3. Berkovits V.L., Lantratov V.M., Lvova T.V., Shakiashivili G.A., Ulin V.P., Paget D. Appl Phys Lett. 63:1993;970.
4. Piotrowski T.T., Piotrowska A., Kamińska E., Golaszewska K., Papis E., Piskorski M. Mat Res Soc Symp Proc. 607:2000;89.