Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2243-2246

  Merckling, C ^a,b   El Kazzi, M ^a   Becerra, L ^a   Largeau, L ^c   Patriarche, G ^c   Saint Girons, G ^a   Hollinger, G ^a  

^a ECOLE CENTRALE DE LYON   (France)

^b STMICROELECTRONICS   (France)

^c CNRS   (France)

Author keywords

Amorphous High dielectrics; Interfacial Al2O3; LaAlO3; Molecular beam epitaxy

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; DEPOSITION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SURFACE CHEMISTRY;

AMORPHOUS OXIDES; POST-ANNEALING PROCESSES; ROBUST INTERFACES;

INTERFACES (MATERIALS);

EID: 34248665581     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.053     Document Type: Article

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