Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4106-4110

  Bisero, D ^a   Corni, F ^a   Frabboni, S ^a   Tonini, R ^a   Ottaviani, G ^a   Balboni, R ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000490155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367165     Document Type: Article

References (19)

1. N. M. Johnson, F. A. Ponce, R. A. Street, and R. J. Nemanich, Phys. Rev. B 35, 4166 (1987).
2. F. A. Ponce, N. M. Johnson, J. C. Tramontana, and J. Walker, in Microscopy of Semiconducting Materials, edited by A. G. Cullis and P. D. Augustus, IOP Conference Proceedings No. 87 (Institute of Physics, Bristol, 1987), p. 49.
3. S. J. Jeng, G. S. Oehrlein, and G. J. Scilla, Appl. Phys. Lett. 53, 1735 (1988).
4. S. Romani and J. H. Evans, Nucl. Instrum. Methods Phys. Res. B 44, 313 (1990).
5. G. F. Cerofolini, L. Meda, R. Balboni, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, M. Anderle, and R. Canteri, Phys. Rev. B 46, 2061 (1992).
6. H. Cerva and S. Schild, Proceedings of the 13th International Conference on Electron Microscopy, Les Editions de Physique, Paris, 1994 (unpublished), Vol. 1, p. 91.
7. L. Meda, G. F. Cerofolini, G. Ottaviani, R. Tonini, F. Corni, R. Balboni, M. Anderle, R. Canteri, and R. Dierckx, Physica B 170, 259 (1991).
8. G. F. Cerofolini, R. Balboni, D. Bisero, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, R. S. Brusa, A. Zecca, M. Ceschini, G. Giebel, and L. Pavesi, Phys. Status Solidi A 150, 539 (1995).
9. D. Bisero, Ph.D. thesis, Modena, 1995 (unpublished).
10. L. Pavesi, D. Bisero, F. Corni, S. Frabboni, R. Tonini, and G. Ottaviani, Mater. Res. Soc. Symp. Proc. 358, 157 (1995).
11. L. Pavesi, G. Giebel, R. Tonini, F. Corni, C. Nobili, and G. Ottaviani, Appl. Phys. Lett. 65, 454 (1994).
12. B. Mohadjeri, J. S. Williams, and J. Wong-Leung, Appl. Phys. Lett. 66, 1889 (1995).
13. V. Raineri, A. Battaglia, and E. Rimini, Nucl. Instrum. Methods Phys. Res. B 96, 249 (1995).
14. G. F. Cerofolini, F. Corni, G. Ottaviani, and R. Tonini, Nucl. Instrum. Methods Phys. Res. B 71, 441 (1992).
15. C. R. Wie, T. A. Tombrello, and T. Vreeland, Jr., J. Appl. Phys. 59, 3743 (1986).
16. M. Servidori and F. Cembali, J. Appl. Crystallogr. 21, 176 (1988).
17. R. Balboni, S. Milita, and M. Servidori, Phys. Status Solidi A 148, 95 (1995).
18. A. van Wieringen and N. Warmoltz, Physica 22, 849 (1956).
19. J. I. Pankove and N. M. Johnson, in Hydrogen in Semiconductors, Semiconductors and Semimetals (Academic, London, 1991), Vol. 34, p. 293.