Reverse-annealing phenomenon during the high-temperature implantation of Ar+ into GaN

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 641-646

  Usov, Igor O ^a   Parikh, Nalin R ^a   Thomson, Darren ^a   Davis, Robert F ^a  

^a UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTAL LATTICES; DOSIMETRY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ATOMIC DENSITY; CHANNELING SPECTROMETRY; HIGH TEMPERATURE IMPLANTATION;

GALLIUM NITRIDE;

EID: 0036377819     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)