Characterization of metal-gate FinFET variability based on measurements and compact model analyses

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  O'Uchi, S ^a   Matsukawa, T ^a   Nakagawa, T ^a   Endo, K ^a   Liu, Y X ^a   Sekigawa, T ^a   Tsukada, J ^a   Ishikawa, Y ^a   Yamauchi, H ^a   Ishii, K ^a   Suzuki, E ^a   Koike, H ^a   Sakamoto, K ^a   Masahara, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT MODELS; FINFETS; MEASUREMENT DATUM; METAL GATES; MODEL PARAMETERS; STRUCTURE-BASED; TRANSISTOR SIZES; WORK-FUNCTION;

ELECTRON DEVICES; SMELTING;

FIELD EFFECT TRANSISTORS;

EID: 64549150048     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796793     Document Type: Conference Paper

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