Characterization of specific contact resistance on heavily phosphorus-doped diamond films

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 782-785

  Kato, Hiromitsu ^a   Takeuchi, Daisuke ^a   Tokuda, Norio ^a   Umezawa, Hitoshi ^a   Okushi, Hideyo ^a   Yamasaki, Satoshi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Contact resistance; Heavily phosphorus doping; n type diamond; Transfer length methode (TLM)

Indexed keywords

HEAVILY PHOSPHORUS DOPING; N-TYPE DIAMOND; PHOSPHORUS CONCENTRATION; PHOSPHORUS-DOPED DIAMOND; SCHOTTKY BARRIERS; SPECIFIC CONTACT RESISTANCES; TRANSFER LENGTH METHODE (TLM); TRANSFER LENGTH METHODS;

CONTACT RESISTANCE; DIAMOND CUTTING TOOLS; DIAMONDS; DOPING (ADDITIVES); PHOSPHORUS; SCHOTTKY BARRIER DIODES;

DIAMOND FILMS;

EID: 67349139208     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.033     Document Type: Article

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