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Volumn 205, Issue 9, 2008, Pages 2195-2199

Electrical activity of doped phosphorus atoms in (001) n-type diamond

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE PROPERTIES; CAPACITANCE-VOLTAGE; CURRENT VOLTAGES; DONOR DENSITIES; ELECTRICAL ACTIVITIES; ELECTRICAL PROPERTIES; MEASURING; PHOSPHORUS ATOMS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES;

EID: 54249095201     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200879722     Document Type: Conference Paper
Times cited : (28)

References (18)
  • 3
    • 36048989911 scopus 로고    scopus 로고
    • C. E. Nebel, B. Rezek, D. Shin, H. Uetsuka, and N. Yang, J. Phys. 040, 6443 (2007).
    • C. E. Nebel, B. Rezek, D. Shin, H. Uetsuka, and N. Yang, J. Phys. 040, 6443 (2007).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.