Homoepitaxial diamond p-n+ junction with low specific on-resistance and ideal built-in potential

Diamond and Related Materials

Volumn 17, Issue 4-5, 2008, Pages 782-785

  Makino, Toshiharu ^a   Kato, Hiromitsu ^a   Ri, Sung Gi ^a   Yamasaki, Satoshi ^a,b   Okushi, Hideyo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Diamond; Electrical property; Hopping conduction; P n junction

Indexed keywords

BORON COMPOUNDS; CURRENT DENSITY; ELECTRIC PROPERTIES; PHOSPHORUS;

HOPPING CONDUCTION; P-N JUNCTION;

DIAMONDS;

EID: 42949095365     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2007.12.006     Document Type: Article

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