Ohmic contacts on p-type homoepitaxial diamond and their thermal stability

Semiconductor Science and Technology

Volumn 20, Issue 8, 2005, Pages 860-863

  Chen, Yigang ^a   Ogura, Masahiko ^a   Yamasaki, Satoshi ^a   Okushi, Hideyo ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; OHMIC CONTACTS; PERTURBATION TECHNIQUES; RAPID THERMAL ANNEALING; RELIABILITY; THERMODYNAMIC STABILITY;

CONDUCTIVE SURFACES; CONTACT RESISTANCE; HOMOEPITAXIAL DIAMOND; OXIDIZATION;

DIAMONDS;

EID: 22844445552     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/8/041     Document Type: Article

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