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Volumn 42, Issue 8 A, 2003, Pages
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Ohmic contact formation for n-type diamond by selective doping
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Author keywords
Heavily doping; N type diamond; Ohmic contact; Selective growth
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Indexed keywords
CARRIER MOBILITY;
CHEMICAL VAPOR DEPOSITION;
DIAMONDS;
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRON TUNNELING;
FILM GROWTH;
GOLD;
OHMIC CONTACTS;
PHOSPHORUS;
PLASMAS;
SEMICONDUCTOR DOPING;
HEAVILY DOPING;
MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;
N TYPE DIAMOND;
SELECTIVE GROWTH;
TUNNELING CURRENT;
THIN FILMS;
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EID: 0141457582
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.l882 Document Type: Letter |
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Times cited : (39)
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References (16)
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