The effects of shower head orientation and substrate position on the uniformity of GaN growth in a HVPE reactor

Journal of the Taiwan Institute of Chemical Engineers

Volumn 40, Issue 4, 2009, Pages 475-478

  Lan, W C ^a   Tsai, C D ^b   Lan, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Computer simulation; GaN; HVPE; Reactor design

Indexed keywords

GAN; GAN GROWTH; HVPE; HYDRIDE VAPOR PHASE EPITAXY; REACTOR DESIGN; SPECIES TRANSPORT;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL GROWTH; FLOW PATTERNS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 67349135764     PISSN: 18761070     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jtice.2008.12.008     Document Type: Article

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