Novel approach to simulation of group-III nitrides growth by MOVPE

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Karpov, S Yu ^a   Prokofyev, V G ^a   Yakovlev, E V ^a   Talalaev, R A ^b   Makarov, Yu N ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AMMONIA; CATALYSTS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; STOICHIOMETRY; THERMODYNAMIC STABILITY; ULTRAVIOLET DEVICES;

CATALYTIC EFFECT; GROUP-III NITRIDES; GROWTH SURFACES; ULTRAVIOLET LIGHT EMITTING DIODE (UVLED);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 3543079366     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000600     Document Type: Article

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