Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1683-1685

  Schmidt, M ^a   Stefani, A ^a   Gottlob, H D B ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

Gadolinium silicate; High temperature stable high k dielectric; SOI n MOSFET with high k

Indexed keywords

ELECTRON TRANSPORT; FUNCTIONAL DEVICES; GADOLINIUM SILICATE; GATE FIRST; GATE STACKS; HIGH TEMPERATURE STABLE HIGH-K DIELECTRIC; HIGH-K DIELECTRIC; INVERSION CHANNELS; METAL GATE ELECTRODES; MOS-FET; PEAK MOBILITY; REFERENCE DEVICES; SOI N-MOSFET WITH HIGH-K; SOI N-MOSFETS; TEST STRUCTURE;

DIELECTRIC MATERIALS; GADOLINIUM; GATE DIELECTRICS; LOGIC GATES; METAL RECOVERY; MOS DEVICES; SILICATES; SPURIOUS SIGNAL NOISE;

MOSFET DEVICES;

EID: 67349088035     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.064     Document Type: Article

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