Erratum to: "Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy" [Physica E 26 (2005) 231-235] (DOI:10.1016/j.physe.2004.08.058);Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 231-235

  Timm, R ^a   Grabowski, J ^a   Eisele, H ^a   Lenz, A ^a   Becker, S K ^a   Muller Kirsch L ^a   Potschke K ^a   Pohl, U W ^a   Bimberg, D ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

GaAs; GaSb; MOCVD; Quantum dots; Quantum wells; XSTM

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY (XSTM); GAAS; GASB; SELF-ORGANIZED QUANTUM DOTS;

NANOSTRUCTURED MATERIALS;

EID: 13444302556     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.07.010     Document Type: Erratum

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