Local stress determination in shallow trench insulator structures with one-side and two-sides pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Liao, Milton M H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEEP SUB-MICRON; DEVICE PERFORMANCE; GEOMETRICAL FEATURES; INSULATOR STRUCTURE; LASER LIGHTS; LOCAL STRESS; MODELIZATION; POLARIZED MICRO-RAMAN; PROCESS FLOWS; RESIDUAL MECHANICAL STRESS; SI OXIDE; SIMULATION TOOL; STI OXIDES; STRESS DISTRIBUTION; STRESS FIELD; TECHNOLOGY COMPUTER AIDED DESIGN;

CHEMICAL VAPOR DEPOSITION; COMPUTER AIDED DESIGN; ELECTRON MOBILITY; METAL RECOVERY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SILICON NITRIDE; SPEECH ANALYSIS; STRESS CONCENTRATION; STRUCTURAL OPTIMIZATION; TOOLS;

YIELD STRESS;

EID: 67249139318     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116531     Document Type: Article

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