Pattern density effect of trench isolation-induced mechanical stress on device reliability in sub-0.1μm technology

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 489-492

  Shih, J R ^a   Wang, Robin ^a   Sheu, Y M ^a   Lin, H C ^a   Wang, J J ^a   Wu, Kenneth ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; HOT CARRIERS; RELIABILITY; SEMICONDUCTING SILICON;

DEVICE RELIABILITY; HOT CARRIER DEGRADATION; HOT-CARRIER-INDUCED DEGRADATION; MECHANICAL STRESS; MECHANICAL STRESS DISTRIBUTIONS; PATTERN DENSITY EFFECTS; PIEZORESISTANCE EFFECTS; SHALLOW TRENCH ISOLATION;

STRESSES;

EID: 84932120648     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315377     Document Type: Conference Paper

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