Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 357-360

  Dombrowski, K F ^a   Fischer, A ^a   Dietrich, B ^a   De Wolf, I ^a   Bender, H ^a   Pochet, S ^a   Simons, V ^a   Rooyackers, R ^a   Badenes, G ^a   Stuer, C ^a   Van Landuyt, J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; LEAKAGE CURRENTS; OXIDATION; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

SHALLOW TRENCH ISOLATION; ULTRAVIOLET EXCITATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 17944384914     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)