Optimal stress design in p-MOSFET with superior performance

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3615-3618

  Liao, Ming Han ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Ballistic efficiency; Injection velocity; Mobility; Strained Si technology

Indexed keywords

BALLISTICS; DESIGN; EXPLOSIVES; GERMANIUM; INTEGRATED CIRCUIT MANUFACTURE; OPTICAL FILTERS; OPTIMIZATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; STRESS CONCENTRATION; STRUCTURAL OPTIMIZATION; TRANSPORT PROPERTIES;

BALLISTIC EFFICIENCIES; BALLISTIC EFFICIENCY; BALLISTIC TRANSPORTS; CHANNEL STRESSES; CIRCUIT DESIGNS; DEVICE DIMENSIONS; DEVICE PERFORMANCES; DEVICE STRUCTURES; ELECTRIC PERFORMANCES; FINITE ELEMENTS; GATE LENGTHS; GE CONCENTRATIONS; INJECTION VELOCITIES; INJECTION VELOCITY; MECHANICAL STRESSES; MOBILITY; MOS FETS; MULTICHANNEL DEVICES; OPTIMAL DESIGNS; OPTIMUM DESIGNS; STRAINED SI TECHNOLOGY; STRESS CHARACTERISTICS; STRESS DESIGNS; STRESS DISTRIBUTIONS; STRESS SIMULATIONS; SUPERIOR PERFORMANCES;

STRESSES;

EID: 57149134092     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006921     Document Type: Article

References (9)

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