High electric-field effects on short-channel polythiophene polymer field-effect transistors

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1497-1501

  Xu, Yifan ^a   Berger, Paul R ^a,b  

^a Ohio State University   (United States)

^b Department of Physics ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON BEAMS; GATES (TRANSISTOR); LIGHT EMITTING DIODES; SEMICONDUCTING POLYMERS; SILICA; THIN FILM TRANSISTORS;

FIELD EFFECT MOBILITY; POLYMER FIELD EFFECT TRANSISTORS; POLYMER LIGHT EMITTING DIODES; POLYTHIOPHENE;

FIELD EFFECT TRANSISTORS;

EID: 1142280277     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1636830     Document Type: Article

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