Complementary multi-gate tunnelling FETs: Fabrication, optimisation and application aspects

International Journal of Nanotechnology

Volumn 6, Issue 7-8, 2009, Pages 628-639

  Fulde, M ^a   Heigl, A ^a   Wachutka, G ^a   Knoblinger, G ^b   Schmitt Landsiedel, D ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

FinFET; MuGFET; MuGTFET; SOI; TFET; Voltage reference

Indexed keywords

FABRICATION; FINFET; LEAKAGE CURRENTS; MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; TEMPERATURE DISTRIBUTION; TUNNEL FIELD EFFECT TRANSISTORS; VOLTAGE MEASUREMENT;

DEVICE CHARACTERISTICS; GATE STACK ENGINEERING; LOW-LEAKAGE CURRENT; LOW-TEMPERATURE DEPENDENCE; MUGFET; MUGTFET; TFET; VOLTAGE REFERENCE;

ELECTRON TUNNELING;

EID: 66749181738     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2009.025301     Document Type: Article

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