A comparative study on In-doping effects for MOVPE GaN films on Si(111) and sapphire substrates

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2562-2565

  Yamamoto, A ^a   Tanikawa, T ^a   Ghosh, Bablu K ^a   Hamano, Y ^a   Hashimoto, A ^a   Ito, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER GROWTH; CARRIER GAS; COMPARATIVE STUDIES; CRYSTALLINE QUALITY; EXCITONIC EMISSION; HARDENING EFFECTS; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE;

GALLIUM NITRIDE; HARDENING; INDIUM; OPTICAL PROPERTIES; SAPPHIRE; SILICON; TENSILE STRESS; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 66749113549     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303502     Document Type: Conference Paper

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