Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide

Wuli Xuebao/Acta Physica Sinica

Volumn 58, Issue 5, 2009, Pages 3302-3308

  Zhang, Hong Hua ^a,b   Zhang, Chong Hong ^a   Li, Bing Sheng ^a,b   Zhou, Li Hong ^a,b   Yang, Yi Tao ^a,b   Fu, Yun Chong ^a,b  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

6H SiC; Ion implantation; Photoluminescence spectrum; Raman spectrum

Indexed keywords

EID: 66549091893     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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