Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 231-238

  Oliviero, E ^a   Beaufort, M F ^a   Barbot, J F ^a   Van Veen, A ^b   Fedorov, A V ^b  

^a UNIVERSITÉ DE POITIERS   (France)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLIZATION; DESORPTION; HELIUM; ION IMPLANTATION;

INTERSTITIALS; OSTWALD RIPENING PROCESSES;

SILICON CARBIDE;

EID: 0037257376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527974     Document Type: Article

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