Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films

Thin Solid Films

Volumn 516, Issue 16, 2008, Pages 5217-5222

  Feng, Z C ^a   Lien, S C ^a   Zhao, J H ^b   Sun, X W ^c   Lu, W ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b RUTGERS UNIVERSITY   (United States)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d FISK UNIVERSITY   (United States)

Author keywords

6H SiC; Annealing; Characterization; Ion implantation; Optics; Structure

Indexed keywords

AMORPHIZATION; ION IMPLANTATION; OPTICAL PROPERTIES; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SURFACE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

COIMPLANTATION; CRYSTALLINITY; IMPLANTATION INDUCED AMORPHOUS LAYERS; POSTANNEALING;

EPITAXIAL FILMS;

EID: 43949143137     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.094     Document Type: Article

References (23)

1. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Silicon Carbide: Recent Major Advances (2004), Springer, Berlin
2. Z.C. Feng, J.H. Zhao ed., Silicon Carbide: Materials, Processings and Devices, Vol. 20 in a book series, Optoelectronic Properties of Semiconductors and Superlattices, Chief ed. M. O. Manasreh, Taylor & Francis Books, Inc., New York, 2003.
3. In: Feng Z.C. (Ed). SiC Power Materials - Devices and Applications (2004), Springer, Berlin
4. Lebedev A.A. Semicond. Sci. Technol. 21 (2006) R17
5. Feng Z.C. Microelectron. Eng. 83 (2006) 165
6. Davis R.F., Kelner G., Shur M., Palmour J.W., and Edmond J.A. Proc. IEEE 79 (1991) 677
7. Harris G.L. In: Harris G.L. (Ed). Properties of Silicon Carbide (1995), Short Run Press, Exeter, UK
8. Rao M.V., Griffiths P., Holland O.W., Kelner G., Freitas Jr. J.A., Simons D.S., Chi P.H., and Ghezo M. J. Appl. Phys. 77 (1995) 2479
9. Hirano Y., and Inada T. J. Appl. Phys. 77 (1995) 1020
10. Calcagno L., Crimaldi M.G., and Musumeci P. J. Mater. Res. 12 (1997) 1727
11. Kimoto T., Inoue N., and Matsunami H. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Fundamental Questions and Applications of SiC (Part II), special issue. Phys. Stat. Sol. (a) vol. 161 (1997) 263
12. Rao M.V., Griffiths P., Gardner J., Holland O.W., Ghezzo M., Hretchmer J., Kelner G., and Freitas J.A. J. Electron. Mater. 25 (1996) 75
13. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heidl, H.P. Strunk, M. Maier, in [3], p.277.
14. Zhao J.H., Tone K., Weiner S.R., Caleca M.A., Du H., and Withrow S.P. IEEE Electron Device Lett. 18 (1997) 375
15. Tone K., and Zhao J.H. IEEE Trans. Electron Devices 46 (1999) 612
16. Feng Z.C., Chua S.J., Tone K., and Zhao J.H. Appl. Phys. Lett. 75 (1999) 472
17. Sze S.M. VLSI Technology (1988), McGraw Hill, New York Chapter 8
18. Mayer J.W., and Lau S.S. Electronic Materials Science (1990), Macmillan, New York Chapter 8
19. Makarov V.N., Plotkin D.A., and Suvorov A.V. Inst. Phys. Conf. Ser. 137 (1994) 545
20. Feldman D.W., Parker Jr. J.H., Choyke W.J., and Patrick L. Phys. Rev. 170 (1968) 698
21. Yoganathan M., Choyke W.J., Devaty R.P., and Neudeck P.G. J. Appl. Phys. 80 (1996) 1763
22. Holm R.T., Klein P.H., and Nordquist Jr. P.E.R. J. Appl. Phys. 60 (1986) 1479
23. Chang W., Feng Z.C., Lin J., Liu R., Wee A.T.S., Tone K., and Zhao J.H. Surf. Interface Anal. 33 (2002) 500